JPS6237542B2 - - Google Patents
Info
- Publication number
- JPS6237542B2 JPS6237542B2 JP6907877A JP6907877A JPS6237542B2 JP S6237542 B2 JPS6237542 B2 JP S6237542B2 JP 6907877 A JP6907877 A JP 6907877A JP 6907877 A JP6907877 A JP 6907877A JP S6237542 B2 JPS6237542 B2 JP S6237542B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- diffusion layer
- type diffusion
- semiconductor substrate
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 40
- 238000009792 diffusion process Methods 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 31
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 5
- 230000005669 field effect Effects 0.000 description 27
- 239000012535 impurity Substances 0.000 description 11
- 238000007796 conventional method Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000001947 vapour-phase growth Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6907877A JPS544080A (en) | 1977-06-10 | 1977-06-10 | Method of producing semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6907877A JPS544080A (en) | 1977-06-10 | 1977-06-10 | Method of producing semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS544080A JPS544080A (en) | 1979-01-12 |
| JPS6237542B2 true JPS6237542B2 (en]) | 1987-08-13 |
Family
ID=13392181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6907877A Granted JPS544080A (en) | 1977-06-10 | 1977-06-10 | Method of producing semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS544080A (en]) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6434362U (en]) * | 1987-08-27 | 1989-03-02 |
-
1977
- 1977-06-10 JP JP6907877A patent/JPS544080A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6434362U (en]) * | 1987-08-27 | 1989-03-02 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS544080A (en) | 1979-01-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR880006781A (ko) | 반도체 집적회로 및 그 제조방법 | |
| JP2543416B2 (ja) | 半導体装置 | |
| JPS5972759A (ja) | 半導体装置の製造方法 | |
| JPS6237542B2 (en]) | ||
| JPS63207177A (ja) | 半導体装置の製造方法 | |
| JP2968078B2 (ja) | Ｍｏｓトランジスタの製造方法 | |
| JPS6110996B2 (en]) | ||
| JPH01272161A (ja) | Ｍｏｓ型ｆｅｔの製造方法 | |
| JPS605068B2 (ja) | Ｍｏｓ形半導体装置 | |
| JPS6237543B2 (en]) | ||
| JPH0342869A (ja) | 半導体装置の製造方法 | |
| JPS605067B2 (ja) | Ｍｏｓ形半導体装置 | |
| JPH0213829B2 (en]) | ||
| KR930001893B1 (ko) | 씨모스 트랜지스터 제조방법 | |
| JPS6211516B2 (en]) | ||
| JPS63129664A (ja) | 半導体装置の製造方法 | |
| KR940000986B1 (ko) | 스택형 cmos 제조방법 | |
| JPH0582734A (ja) | Ｍｏｓ半導体装置の製造方法 | |
| JPS6159539B2 (en]) | ||
| JP3241363B2 (ja) | ＢｉＣＭＯＳ集積回路装置の製造方法 | |
| JPH03171671A (ja) | 半導体装置及びその製造方法 | |
| KR0166795B1 (ko) | 씨모스 제조방법 | |
| JP2594697B2 (ja) | 半導体装置の製造方法 | |
| JPS60788B2 (ja) | シリコンゲ−トｍｉｓ半導体装置の製法 | |
| JPS6126223B2 (en]) |